Huashuo S-SiC physical properties
Performance | Unit | HS-A | HS-P | HS-XA |
---|---|---|---|---|
Grain Size | μm | 4-10 | 4-10 | 4-10 |
Density | g/cm | ≥3.1 | 3.0-3.1 | >3.1 |
Hardness (Knoop) | Kg/mm² | 2800 | 2800 | 2800 |
Flexural Strength 4 pt @ RT | MPa*m1/2 *10³1b/in² |
385 55 |
240 55 |
420 55 |
Compressive Strength @ RT | Mpa *10³1b/in² |
3900 560 |
3900 560 |
|
Modulus of Elasticity @ RT | Gpa *10³1b/in² |
410 59 |
400 58 |
410 59 |
Weibull Modulus (2 parameter) | 8 | 19 | 12 | |
Poisson Ratio | 0.14 | 0.14 | 0.14 | |
Fracture Toughness @ RT Double Torsion & SENB | MPa*m1/2 *1³1b/in²in½ |
8 |
8 |
8 |
Coefficient of Thermal Expansion RT to 700℃ | X10-6mm/mmK X10-6 in/in°F |
4.02 2.2 |
4.2 2.3 |
4.02 2.2 |
Maximum Service Temp.Air Mean Specific Heat @ RT | °C J/gmK |
1900 0.67 |
1900 0.59 |
1900 0.67 |
Thermal Conductivity @ RT | W/mK Btu/ft h°F |
125.6 72.6 |
110 64 |
125.6 72.6 |
@200°C | W/mK Btu/ft h°F |
102.6 59.3 |
102.6 59.3 |
|
@400°C | W/mK Btu/ft h°F |
77.5 44.8 |
77.5 44.8 |
|
Permeability @ RT to 1000°C | 31MPa below No gas leakage | |||
Electrical Resistivity @ RT | Ohm-cm | 102-106 | N/A | 102-106 |
Emissivity | 0.9 | 0.9 | 0.9 |
Performance | ||||
---|---|---|---|---|
Ingredient | SiC | SiC+10%Si | WC+6%Co | A12O3 |
Density
SiC
3.10
SiC+10%Si
3.00
WC+6%Co
14.50
A12O3
3.93
Fracture Toughness
SiC
4
SiC+10%Si
4.5
WC+6%Co
9
A12O3
2.5
Modulus of Elasticity
SiC
410
SiC+10%Si
360
WC+6%Co
400
A12O3
380
Coefficient of Thermal Expansion
SiC
4*10-1
SiC+10%Si
5*10-1
WC+6%Co
A12O3
7.6*10-6
Hardness (Knoop)
SiC
2800
SiC+10%Si
2700
WC+6%Co
1880
A12O3
2200
Thermal Conductivity
SiC
126
SiC+10%Si
95
WC+6%Co
110
A12O3
20
Flexural Strength 4 pt
SiC
385(55)
SiC+10%Si
110(16)
WC+6%Co
570(83)
A12O3
300(43)
Mean Specific Heat
SiC
0.67
SiC+10%Si
0.80
WC+6%Co
0.95
A12O3
0.90
Compressive Strength
SiC
3970(560)
SiC+10%Si
WC+6%Co
7900(1140)
A12O3
3450(500)
Maximum Service Temp.Air
SiC
1900
SiC+10%Si
1200
WC+6%Co
900
A12O3
1400
Corrosion speed(mg/cm2yr)
SiC
1.5
SiC+10%Si
50.0
WC+6%Co
>1000
A12O3
65.0
Reagent and Concentration | Temperature |
---|---|
98%H2SO4 | 100℃ |
Corrosion speed(mg/cm2yr)
SiC
<0.2
SiC+10%Si
0.5
WC+6%Co
>1000
A12O3
7.0
Reagent and Concentration | Temperature |
---|---|
70%HNO3 | 100℃ |
Corrosion speed(mg/cm2yr)
SiC
2.5
SiC+10%Si
>1000
WC+6%Co
5.0
A12O3
75.0
Reagent and Concentration | Temperature |
---|---|
50%NaOH | 100℃ |
Corrosion speed(mg/cm2yr)
SiC
<0.2
SiC+10%Si
>1000
WC+6%Co
3.0
A12O3
60.0
Reagent and Concentration | Temperature |
---|---|
45%KOH | 100℃ |
Corrosion speed(mg/cm2yr)
SiC
<0.2
SiC+10%Si
7.0
WC+6%Co
8.0
A12O3
20.0
Reagent and Concentration | Temperature |
---|---|
53%HF | 100℃ |
Corrosion speed(mg/cm2yr)
SiC
<0.2
SiC+10%Si
0.9
WC+6%Co
85.0
A12O3
72.0
Reagent and Concentration | Temperature |
---|---|
25%HCI | 100℃ |
Corrosion speed(mg/cm2yr)
SiC
<0.2
SiC+10%Si
8.0
WC+6%Co
55.0
A12O3
>1000
Reagent and Concentration | Temperature |
---|---|
85%H2PO4 | 100℃ |
Corrosion speed(mg/cm2yr)
SiC
<0.2
SiC+10%Si
>1000
WC+6%Co
>1000
A12O3
16.0
Reagent and Concentration | Temperature |
---|---|
10%HF plus 57% HNO3 | 100℃ |
* Testing condition: soak for 125-300 hours and stir routinely